The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...
SemiQ Inc. expanded its family of 1,200-V Gen3 silicon-carbide (SiC) MOSFETs with five SOT-227 modules that offer on-resistance (R DS(on)) values of 7.4, 14.5, and 34 mΩ. The GCMS modules, which ...
MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...
Vishay Intertechnology has introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium to high frequency applications in automotive, energy, industrial, ...
SemiQ expands its 1200-V Gen3 SiC MOSFET family with SOT-227 modules offering on-resistance values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. GCMS models are co-packaged with a Schottky barrier diode (SBD), while ...
Abstract: Medium voltage (MV) silicon carbide (SiC) power semiconductor modules with excellent electrothermal properties offer novel opportunities for revolutionizing high-power electronic converters ...
Infineon Technologies’ new CoolSET system-in-package (SiP) is a compact, fully integrated system power controller for high-efficiency power delivery of up to 60 W at a universal input voltage range of ...
Built on state-of-the-art trench semiconductor technology, Infineon CoolSiC MOSFETs are optimized for both the lowest losses in the application and the highest reliability in operation. In addition to ...
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