By traditional metrics, NVTS stock looks expensive. The company has very low current revenue and is not yet profitable. Yet ...

PowerAmerica, the US DoE-backed organisation connecting wide bandgap chip-makers and users with research experts, has ...

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...

The "The Global RF GaN Market 2026-2036" has been added to ResearchAndMarkets.com's offering. The global Radio Frequency Gallium Nitride (RF GaN) market is experiencing robust expansion, driven by the ...

NEC has announced the development of a high-efficiency, compact 10mm x 6mm GaN-based Power Amplifier Module (PAM) for the sub-6GHz band, designed for integration into 5G base station Radio Units (RUs) ...

Gallium-nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications.

As global energy demand surges—driven by AI-hungry data centers, advanced manufacturing, and electrified transportation—researchers at the National Renewable Energy Laboratory have unveiled a ...

AI factories meet the computational capacity and power requirements of today’s machine-learning and generative AI workloads.

Five 1200-V SiC power modules in SOT-227 packages from Vishay serve as drop-in replacements for competing solutions.

NEC announced the development of a high-efficiency, compact Power Amplifier Module (PAM) for the sub-6GHz band, designed for integration into 5G base station Radio Units (RUs).

NEC has engineered a compact Power Amplifier Module (PAM) designed to cut energy draw in 5G base station Radio Units.