IXYS announced the availability of 1700 V and 2500 V XPT™ IGBTs for power management applications. With current ratings ranging from 26 A to 178A, the devices are well suited for high-voltage (“HV”), ...

A power MOSFET is almost invariably used in today's high-frequency power converter applications being a voltage controlled, fast switching and majority-carrier device. However, MOSFET's major ...

Automotive systems traditionally have had no need for the high-voltage performance of insulated gate bipolar transistors (IGBTs). However, new developments in conventional and electric vehicles are ...

SEOUL, South Korea, March 12, 2025--(BUSINESS WIRE)--Magnachip Semiconductor Corporation ("Magnachip" or "Company") (NYSE: MX) announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

IXYS Corporation announces the release of the new . Featuring "free" intrinsic body diodes and current ratings from 45 A to 125 A, these devices present combined strengths of both MOSFETs and IGBTs.

Shanghai-based WeEn Semiconductors unveiled 650V and 1,200V IGBTs with fast recovery anti-parallel diodes at PCIM in Nuremberg. “Based on fine trench gate field-stop technology, the IGBTs provide a ...

BIEL, Switzerland--(BUSINESS WIRE)--IGBT gate driver manufacturer CT-Concept Technologie GmbH, a Power Integrations company, has announced the availability of its 1SC0450V single driver core for IGBT ...

SAN JOSE, Calif.--(BUSINESS WIRE)-- High-power and high-frequency induction heating (IH) appliances require lower conduction losses and superior switching performance in order to achieve higher ...

MILPITAS, Calif. & BIEL, Switzerland--(BUSINESS WIRE)-- IXYS Corporation (NAS: IXYS) , a manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, and ...