Business Wire

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
Electronics Weekly

1,700V GaN mosfet IC from Power Integrations

Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated within its latest series of InnoMux-branded multi-output fly-back ac-dc ...
Electronic Design

GaN Modules Boost Switching Frequencies While Maintaining Efficiency

In 2012, we finally got real insight into gallium-nitride (GaN) power devices. Efficient Power Conversion (ePC) published a 200-page textbook about the devices. 1 If you want to understand how to ...
EDN

SiC and GaN power ICs rule at APEC 2024

Manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power ICs leveraged the APEC 2024 conference to highlight their latest developments in wide-bandgap semiconductors. These devices offer ...
Morningstar

Alpha and Omega Semiconductor Supports 800 VDC Power Architecture for Next-Generation AI Factories with Innovative SiC and GaN, Power MOSFET, and Power IC Solutions

Alpha and Omega Semiconductor Supports 800 VDC Power Architecture for Next-Generation AI Factories with Innovative SiC and GaN, Power MOSFET, and Power IC Solutions Alpha and Omega Semiconductor ...
Electronic Design

GaN: Switching It Up in Power Electronics

Gallium nitride (GaN) is breaking out in the world of power electronics. GaN stands out for its superior physical properties, including high electron mobility, wide bandgap, and high thermal ...
sciencex

Industry's first 80-V half-bridge GaN FET module

Texas Instruments today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and ...
EDN

GaN and SiC power devices deliver big benefits to mil/aero systems

The increasing need for higher power density and improved cooling on military and aerospace platforms is pushing silicon-based power electronics systems to their operational limits. Wide-bandgap (WBG) ...
Semiconductor Engineering

GaN Power Semi Biz Heats Up

The market for devices based on gallium nitride (GaN) technology is heating up amid the push for faster and more power efficient systems. Today, GaN is widely used in the production of LEDs. In ...
Semiconductor Engineering

How To Use S-Parameters For Power Module Verification

Power modules are high-power switching circuits that convert DC- in AC-currents in electric vehicles, renewable energy, and many more applications. New materials [14] and device technologies [14], ...
01Net

Alpha and Omega Semiconductor Supports 800 VDC Power Architecture for Next-Generation AI Factories with Innovative SiC and GaN, Power MOSFET, and Power IC Solutions

SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) a designer, developer, and global supplier of a broad range of discrete power devices, wide bandgap power ...